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Ya-Hong Xie, Ph.D.

   
Professor, Materials Science and Engineering
Member, California NanoSystems Institute

Education:
Degrees:
Ph.D., Purdue University, 1986
M.S., Purdue University, 1983
B.Sc., Purdue University, 1981

Contact Information:
Email Address: yhx@seas.ucla.edu
Email Address: yhx@ucla.edu
Mailing Address: Department of Materials Science and Engineering (UCLA)
6532-E Boelter Hall
Los Angeles, CA 90095
UNITED STATES
Home Page: http://www.seas.ucla.edu/ms/faculty1/xie.html
Work Phone Number: (310) 825-2971
Additional Information:

Ya-Hong Xie obtained his BSc in Physics from Purdue University in 1981, and his MSc and PhD in Electrical Engineering from the University of California at Los Angeles in 1983 and 1986, respectively. He became a member of the technical staff in the Physical Sciences and Engineering Research Division of Bell Laboratories, Lucent technologies in 1986 where he remained until joining the faculty of UCLA in 1999 as a professor in the department of Materials Science and Engineering.

Ya-Hong Xie has conducted research in the various fields aimed at increasing the functionality of Si-based electronics and optoelectronics. During his 14 years tenure at Bell Laboratories, he conducted research in impurity center mediated luminescence in Si (e.g. Er doped Si), vertical cavity surface emitting lasers (VCSELs), light emitting porous Si, GeSi/Si molecular beam epitaxy (MBE), dislocation kinetics in relaxed GeSi/Si heterostructures, strain induced surface roughening in GeSi epitaxial thin films (also known as self-assembled quantum dots), fabrication of high mobility two-dimensional electron and hole gases in GeSi/Si, and the transport properties and device applications of various Si-based heterostructures. His recently research focuses have been in the understanding of phase change dynamics of chalcogenide materials in nanometer volume, the demonstration of quantum dot based electro-optical modulator for chip-to-chip optical interconnects, the fabrication of high mobility 2-dimensional electron systems for quantum transport studies, and at the latest the fabrication of graphene by CVD.

Ya-Hong Xie has authored and co-authored over 130 scientific articles in refereed journals, and holds 22 US patents. He is a member of the American Physical Society, the Materials Research Society, and a senior member of IEEE.

Selected Publications:

Wei Liu, Choong-Heui Chung, Cong-Qin Miao, Yan-Jie Wang, Bi-Yun Li, Ling-Yan Ruan, Ketan Patel, Young-Ju Park, Jason Woo and Ya-Hong Xie , Chemical vapor deposition of large area few layer graphene on Si catalyzed with nickel films, Thin Solid Films, 2010, 518 (6, S1), S128-S132 .
Hu, Quanli; Seo, Il; Zhang, Zhenning; Lee, Seung-Hyun; Kim, Hyun-Mi; Kim, Soo-Hyun; Kim, Yong-Sang; Lee, Hyun Ho; Xie, Ya-Hong; Kim, Ki-Bum, Controlling dislocation positions in silicon germanium (SiGe) buffer layers by local oxidation, Thin Solid Films, 2010, 518 (6), S217-21.
Liu W, Xiu FX, Sun K, Xie YH, et al. , Na-Doped p-Type ZnO Microwires, J Am Chem Soc, 2010, 132 (8), 2498–2499.
Xie YH, Liu JL, Bauer M , Sixth International Conference on Silicon Epitaxy and Heterostructures Preface, THIN SOLID FILMS , 2010, 518 (6), S1-S1.
Galatsis K, Khitun A, Ostroumov R, Xie YH, et al. , Alternate State Variables for Emerging Nanoelectronic Devices, IEEE TRANSACTIONS ON NANOTECHNOLOGY , 2009, 8 (1), 66-75.
Yoon TS, Kim HM, Kim KB, Xie YH, et al. , Study of growth behaviour and microstructure of epitaxially grown self-assembled Ge quantum dots on nanometer-scale patterned SiO2/Si(001) substrates, Physica Status Solidi (B), 2009, 246 (4), 721-724.
Liu, J., Kim, J. H., Xie, Y. H., Lu, T. M., Lai, K., Epitaxial growth of two-dimensional electron gas (2DEG) in strained silicon for research on ultra-low energy electronic processes, Thin Solid Films, 2008, 517 (1), 45-9.
Kim, J., Lee, J. Y., Xie, Y. H., Fabrication of dislocation-free Si films under uniaxial tension on porous Si compliant substrates, Thin Solid Films, 2008, 516 (21), 7599-603.
Lu TM, Sun L, Tsui DC, Lyon S, Pan W, Muhlberger M, Schaffler F, Liu J, Xie YH , In-plane field magnetoresistivity of Si two-dimensional electron gas in Si/SiGe quantum wells at 20 mK, PHYSICAL REVIEW B , 2008, 78 (26).
Sahni, S., Luo, X., Liu, J., Xie, Y. H., Yablonovitch, E., Junction field-effect-transistor-based germanium photodetector on silicon-on-insulator, Optics Letters, 2008, 33 (10), 1138-40.
Liu, J., Lu, T. M., Kim, J., Lai, K., Tsui, D. C., Xie, Y. H. , The proximity effect of the regrowth interface on two-dimensional electron density in strained Si, Applied Physics Letters, 2008, 92 (11), 112113.
Jeehwan Kim, Biyun Li, and Ya-Hong Xie , A method for fabricating dislocation-free tensile-strained SiGe films via the oxidation of porous Si substrates, Applied Physics Letters, 2007, 91 (25).
Lu, T.M., Liu, J., Kim, J., Lai, K., Tsui, D.C., and Xie, Y.H., Capacitively induced high mobility two-dimensional electron gas in undoped Si/SiGe heterostructures with atomic-layer-deposited dielectric, Appl. Phys. Lett, 2007, 90 (18), 182114.
Kim, H.J., Xie, Y.H. and Wang, K.L., Lateral arrangement of Ge self-assembled quantum dots on a partially relaxed SiGe buffer layer, Lateral Alingnment of Epitaxial Quantum Dots, 2007, Part 1, Ch. 7, page 209.
Yoon, T.S., Kim, H.M., Kim, K.B., Ryu, D.Y., Russell, T.P., Zhao, Z.M., Liu, J., and Xie, Y.H., Microstructure Analysis of Epitaxially Grown Self-Assembled Ge Islands on Nanometer-Scale Patterned SiO2/Si Substrates by High-Resolution Transmission Electron Microscopy, J. Appl. Phys, 2007, 102 (10), 104306.
Shi, B., Chang, P.S., Sun, K., Xie, Radhakrishnan, Y.H., Monbouquette, H.G., Monolithic integrated modulator on silicon for optical interconnects, IEEE Photonics Technology Letters, 2007, 19 (2), 55-57.
Chengkun Xu, Xi Zhang, King-Ning Tu, and Yahong Xie, Nickel Displacement Deposition of Porous Silicon with Ultrahigh Aspect Ratio, J. Electrochem. Soc, 2007, 154 (3), D170-D174.
CHENGKUN XU, MINGHENG LI, XI ZHANG, TU King-Ning, YAHONG XIE, Theoretical studies of displacement deposition of nickel into porous silicon with ultrahigh aspect ratio, Electrochimica acta, 2007, 52 (12), 3901-9.
Galatsis K, Wang K, Botros Y, Yang Y, Xie YH, Stoddart JF, Kaner RB, Ozkan C, Liu JL, Ozkan M , Zhou CW, Kim KW, Emerging memory devices - Nontraditional possibilities based on nanomaterials and nanostructures, IEEE CIRCUITS & DEVICES , 2006, 22 (3), 12-21.
Tae-Sik Yoon, Zuoming Zhao, Jian Liu, Ya-Hong Xie, Du yeol Ryu, Thomas P. Russell, Hyun-Mi Kim, and Ki-Bum Kim , Selective growth of Ge islands on nanometer-scale patterned SiO2/Si substrate by molecular beam epitaxy, Applied Physics Letters , 2006, 89 (16).
Yoon TS, Zhao ZM, Feng W, Li BY, Liu J, Xie YH, Ryu DY, Russell TP, Kim HM, Kim KB, Growth behavior and microstructure of Ge self-assembled islands on nanometer-scale patterned Si substrate, JOURNAL OF CRYSTAL GROWTH, 2006, 290 (2), 369-73.
Xi Zhang, K. N. Tu, Y. H. Xie, and C. H. Tung, High Aspect Ratio Nickel Structures Fabricated by Electrochemical Replication of Hydrofluoric Acid Etched Silicon, Electrochem. Solid-State Lett, 2006, 9 (9), C150-2.
Zhang X, Tu KN, Xie YH, Tung CH, Xu SY, Single-step fabrication of nickel films with arrayed macropores and nanostructured skeletons, Advanced Materials, 2006, 18 (14), 1905-9.
Zhao, Z.M., Yoon, T.S., Feng, W., Li, B.Y., Kim, J.H., Liu, J., Hulko, O., Xie, Y.H., Kim, H.M., Kim, K.B., Kim, H.J., Wang, K.L., Ratsch, C., Caflisch, R., Ryu, D.Y., and Russell, T.P., The Challenges in Guided Self-assmbly of Ge and InAs Quantum Dots on Si, Thin Solid Film, 2006, 508 (1-2), 195-9.
Lai K, Lu TM, Pan W, Tsui DC, Lyon S, Liu J, Xie YH, Muhlberger M, Schaffler F, Valley splitting of Si/SiGe heterostructures in tilted magnetic fields, PHYSICAL REVIEW B, 2006, 73 (16).
Zhao, Z.; Hulko, O.; Kim, H.; Liu, J.; Shi, B.; Xie, Y., Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001), Thin Solid Films, 2005, 483 (1-2), 158-63.
Chong KC, Xie YH, Yu KW, Huang DQ, Chang MCF, High-performance inductors integrated on porous silicon, IEEE ELECTRON DEVICE LETTERS, 2005, 26 (2), 93-5.
Kyuchul Chong, Ya-Hong Xie, High-performance on-chip transformers, Electron Device Letters, IEEE, 2005, 26 (8), 557 - 9 .
Z. M. Zhao, O. Hulko, T. S. Yoon, and Y. H. Xie , Initial stage of InAs growth on Si (001) studied by high-resolution transmission electron microscopy, J. Appl. Phys, 2005, 98 (12).
Kyuchul Chong, Ya-Hong Xie , Low capacitance and high isolation bond pad for high-frequency RFICs, IEEE ELECTRON DEVICE LETTERS, 2005, 26 (10), 746-8.
Yoon, Tae-Sik Liu, Jian Noori, Atif M. Goorsky, Mark S. Xie, Ya-Hong , Surface roughness and dislocation distribution in compositionally graded relaxed SiGe buffer layer with inserted-strained Si layers, Applied Physics Letters, 2005, 87 (1).
Chong KC, Zhang X, Tu KN, Huang DQ, Chang MC, Xie YH, Three-dimensional substrate impedance engineering based on p(-)/p(+) Si substrate for mixed-signal, system-on-chip (SoC), IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (11), 2440-6.
Kim HJ, Zhao ZM, Liu J, Ozolins V, Chang JY, Xie YH, A technique for the measurement of surface diffusion coefficient and activation energy of Ge adatom on Si(001), JOURNAL OF APPLIED PHYSICS, 2004, 95 (11), 6065-6071, Pt. 1.
Bao Y, Balandin AA, Liu JL, Liu J, Xie YH, Experimental investigation of Hall mobility in Ge/Si quantum dot superlattices, Applied Physics Letters, 2004, 84 (17), 3355-3357.
P.R. Bandaru, S. Sahni, E. Yablonovitch, J. Liu, H.-Jun Kim, Y.-H. Xie, Fabrication and characterization of low temperature (<450 ◦C) grown p-Ge/n-Si photodetectors for silicon based photonics, Materials Science and Engineering B, 2004, 113, 79-84.
Liu J, Kim HJ, Hul'ko O, Xie YH, Sahni S, Bandaru P, Yablonovitch E, Ge films grown on Si substrates by molecular-beam epitaxy below 450 degrees C, JOURNAL OF APPLIED PHYSICS, 2004, 96 (1), 6065-6071, Pt. 1.
H. J. Kim, J. Liu, Z. M. Zhao, and Y. H. Xie, On the formation mechanism of epitaxial Ge islands on partially relaxed SiGe buffer layers, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (4), 2257-2260.
Han-Su Kim, Kyuchul Chong, and Ya-Hong Xie , Study of the cross-sectional profile in selective formation of porous silicon, Appl. Phys. Lett, 2003, 83 (13), 2710-2.
Kim HS, Chong K, Xie YH, Jenkins KA, The importance of distributed grounding in combination with porous Si trenches for the reduction of RF crosstalk through p(-) Si substrate, IEEE ELECTRON DEVICE LETTERS, 2003, 24 (10), 640-2.
Han-Su Kim, Kyuchul Chong, Ya-Hong Xie, The promising role of porous Si in mixed-signal integrated circuit technology, Physica Status Solidi (A), 2003, 197 (1), 269-74.
Han-Su Kim, Ya-Hong Xie, Marc DeVincentis, Tatsuo Itoh, and Keith A. Jenkins , Unoxidized porous Si as an isolation material for mixed-signal integrated circuit applications, Journal of Applied Physics, 2003, 93 (7).
Kim HS, Jenkins KA, Xie YH, Effective crosstalk isolation through p(+) Si substrates with semi-insulating porous Si, IEEE ELECTRON DEVICE LETTERS , 2002, 23 (3), 160-2.
Han-Su Kim, Eric C. Zouzounis, and Ya-Hong Xie , Effective method for stress reduction in thick porous silicon films, Appl. Phys. Lett, 2002, 80 (13).