California NanoSystems Institute
CNSI
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Diana Huffaker, Ph.D.

   
Director, Integrated NanoMaterials Lab
Professor, Electrical Engineering
Administrator and Director, Integrated NanoMaterials Core Lab, California NanoSystems Institute

Education:
Degrees:
Ph.D., University of Texas, Austin, 1994
M.S., University of Texas, Austin, 1990
B.S., University of Arizona, 1986

Honors and Awards:
2010 SPIE, Nanotechnology Innovation Award
2009 IEEE, Fellow
2004 Alexander Von Humboldt Fellowship
2002 Compound Semiconductor Symposium Young Scientist Award

Professional Societies:
Institute of Electrical and Electronics Engineers, Member
Materials Research Society, Member
National Security Science and Engineering Faculty Fellowships, Member
Women in Science and Engineering, Member

Certifications:
Certification Type:
2004 LEOS Board of Governors, Elected Member

Contact Information:
Work Email Address: huffaker@ee.ucla.edu
Work Address: University of California, Los Angeles Department of Electrical Engineering
BOX 951594
Los Angeles, CA 90095
UNITED STATES
Home Page: http://www.ee.ucla.edu/~huffaker/
Work: http://cleanenergy.ucla.edu
Fax Number: (310) 206-4685
Work Phone Number: (310) 825-9786
Research Interests:

Professor Huffaker's current research projects include work on crystal growth (MBE, MOCVD) and characterization of patterned and self-assembeled quantum dots in compound III-(As, P, N, Sb), III/V-Si photonics and electronic characterization of biomaterials. Dr. Huaffaker is also currently working on projects that focus on formation kinetics, coherent optical processes in nanostructures for optoelectronic devices based on newly developed materials, lattice mismatched epitaxy including MWIR lasers, III-V nanotransistors and solar cells, optical interconnects and integrated optoelectronics based on VCSEL technology.



Selected Publications:

Paul J. Simmonds, Ramesh Babu Laghumavarapu, Meng Sun, Andrew Lin, Charles J. Reyner, Baolai Liang, and Diana L. Huffaker, Structural and optical properties of InAs/AlAsSb quantum dots with GaAs(Sb) cladding layers. , Applied Physics Letters, 2012, 100, 243108.
Adam C. Scofield, Joshua N. Shapiro, Andrew Lin, Alex D. Williams, Ping-Show Wong, Baolai L. Liang, and Diana L. Huffaker, Bottom-up Photonic Crystal Cavities Formed by Patterned III?V Nanopillars, Nano Lett, 2011, Epub ahead of print.
Hanond Nong, Maud Gicquel-Guézo, Laurent Bramerie, Mathieu Perrin, Frédéric Grillot, Romain Fleurier, Baolai Liang, Diana L. Huffaker, Christophe Levallois, Julie Le Pouliquen, Alain Le Corre, Olivier Dehaese, and Slimane Loualiche, Enhanced Properties in Single-Walled Carbon Nanotubes Based Saturable Absorber for All Optical Signal Regeneration, Jpn. J. Appl. Phys, 2011, 50 (4), 040206.
J. N. Shapiro, A. Lin, P. S. Wong, A. C. Scofield, C. Tu, P. N. Senanayake, G. Mariani, B. L. Liang, and D. L. Huffaker, InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy, Appl. Phys. Lett, 2010, 97 (24).
Liang BL, Wong PS, Pavarelli N, Tatebayashi J, Ochalski TJ, Huyet G, Huffaker DL, Lateral interdot carrier transfer in InAs quantum dot cluster grown on pyramidal GaAs surface, Nanotechnology, 2011, 22 (5), 055706.
Giacomo Mariani, Ping-Show Wong, Aaron M. Katzenmeyer, Francois Lonard, Joshua Shapiro, and Diana L. Huffaker, Patterned Radial GaAs Nanopillar Solar Cells, Nano Lett, 2011, Epub ahead of print.
Vanessa Evoen, Hailong Zhou, Li Gao, Marta Pozuelo, Baolai Liang, Jun Tatebeyashi, Suneel Kodambaka, Diana L. Huffaker, Robert F. Hicks, Self-catalyzed vapor-liquid-solid growth of InP/InAsP core-shell nanopillars, Journal of Crystal Growth, 2011, 314 (1), 34-8.
P. S. Wong, B. L. Liang, A. Lin, J. Tatebayashi, and D. L. Huffaker, 1.52-μm Photoluminescence Emissions from InAs Quantum Dots Grown on Nanopatterned GaAs Buffers, Appl. Phys. Lett, 2010, 97 (14).
He J, Reyner CJ, Liang BL, Nunna K, Huffaker DL, Pavarelli N, Gradkowski K, Ochalski TJ, Huyet G, Dorogan VG, Mazur YI, Salamo GJ, Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transition, Nano Lett, 2010, 10 (8), 3052-6.
Ping-Show Wong, Baolai Liang, Ryan Molecke, Jun Tatebayashi and Diana L. Huffaker, Controlled Formation and Dynamic Wulff Simulation of Equilibrium Crystal Shapes of GaAs Pyramidal Structures on Nanopatterned Substrates, Cryst. Growth Des, 2010, 10 (6), 2509-2514.
Kamil Gradkowski, Tomasz J. Ochalski, Nicola Pavarelli, David P. Williams, Guillaume Huyet, Baolai Liang, and Diana L. Huffaker, Coulomb effect inhibiting spontaneous emission in charged quantum dot, Appl. Phys. Lett, 2010, 97 (9).
Giacomo Mariani, Ramesh B. Laghumavarapu, Bertrand Tremolet de Villers, Joshua Shapiro, Pradeep Senanayake, Andrew Lin, Benjamin J. Schwartz, and Diana L. Huffaker, Hybrid conjugated polymer solar cells using patterned GaAs nanopillars, Appl. Phys. Lett, 2010, 97 (1).
Wong PS, Liang B, Huffaker DL., InAs quantum dots on nanopatterned GaAs (001) surface: the growth, optical properties, and device implementation, J Nanosci Nanotechnol, 2010, 10 (3), 1537-50.
Tatebayashi, J.; Mariani, G.; Lin, A.; Hicks, R. F.; Huffaker, D. L.;, Optical characteristics of GaInP/GaP double-heterostructure core-shell nanowires embedded in polydimethylsiloxane membranes, Applied Physics Letters, 2010, 96 (25), 253101 - 253101-3.
Pradeep Senanayake, Andrew Lin, Giacomo Mariani, Joshua Shapiro, Clayton Tu, Adam C. Scofield, Ping-Show Wong, Baolai Liang, and Diana L. Huffaker, Photoconductive Gain in Patterned Nanopillar Photodetector Arrays, Applied Physics Letters, 2010, 97 (20).
Katzenmeyer AM, Léonard F, Talin AA, Wong PS, Huffaker DL, Poole-Frenkel effect and phonon-assisted tunneling in GaAs nanowires, Nano Lett, 2010, 10 (12), 4935-8.
J. Tatebayashi, A. Lin, P. S. Wong, R. F. Hick, and D. L. Huffaker, Visible light emission from self-catalyzed GaInP/GaP core-shell double heterostructure nanowires on silicon, J. Appl. Phys, 2010, 108 (3), 034315-1-5.
Jallipalli, A., Nunna, K., Kutty, M.N., Balakrishnan, G., Lush, G.B., Dawson, L.R., Huffaker, D.L. , Compensation of interfacial states located inside the "buffer-free" GaSb/GaAs (001) heterojunction via δ-doping, Appl. Phys. Lett, 2009, 95 (7).
Gradkowski, Kamil; Pavarelli, Nicola; Ochalski, Tomasz J.; Williams, David P.; Tatebayashi, Jun; Huyet, Guillaume; O'Reilly, Eoin P.; Huffaker, Diana L., Complex emission dynamics of type-II GaSb/GaAs quantum dots, Applied Physics Letters, 2009, 95 (6).
Rotter, T.J., Tatebayashi, J., Senanayake, P., Balakrishnan, G., Rattunde, M., Wagner, J., Hader, J., Moloney, J.V., Koch, S.W., Dawson, L.R., Huffaker, D.L., Continuous-Wave, Room-Temperature Operation of 2-µm Sb-Based Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser Monolithically Grown on GaAs Substrates, Appl. Phys. Express, 2009, 2 (11).
Kamil Gradkowski, Tomasz J. Ochalski, David P. Williams, Sorcha B. Healy, Jun Tatebayashi, Ganesh Balakrishnan, Eoin P. O’Reilly, Guillaume Huyet, and Diana L. Huffaker, Coulomb effects in type-II Ga(As)Sb quantum dots, P hys. Status Solidi B, 2009, 246 (4), 752–755.
Jallipalli, A.; Nunna, K.; Kutty, M. N.; Balakrishnan, G.; Dawson, L. R.; Huffaker, D. L., Electronic characteristics of the interfacial states embedded in ``buffer-free'' GaSb/GaAs (001) heterojunctions, Applied Physics Letters, 2009, 95 (20).
Wong, P. S. Liang, B. L. Tatebayashi, J. Xue, L. Nuntawong, N. Kutty, M. N. Brueck, S. R. Huffaker, D. L., Fabrication and characteristics of broad-area light-emitting diode based on nanopatterned quantum dots, Nanotechnology, 2009, 20 (3), 35302.
Tatebayashi, J.; Baolai Liang; Bussian, D.A.; Htoon, H.; Shenghong Huang; Balakrishnan, G.; Klimov, V.; Dawson, L.R.; Huffaker, D.L.;, Formation and optical characteristics of type-II strain-relieved GaSb/GaAs quantum dots by using an interfacial misfit growth mode, IEEE Transactions on Nanotechnology, 2009, 8 (2), 269-74.
Baolai Liang, Andrew Lin, Nicola Pavarelli, Charles Reyner, Jun Tatebayashi, Kalyan Nunna, Jun He, Tomasz J Ochalski, Guillaume Huyet and Diana L Huffaker, GaSb/GaAs type-II quantum dots grown by droplet epitaxy, Nanotechnology, 2009, 20 (45).
Shenghong Huang, Ganesh Balakrishnan, and Diana L. Huffaker, Interfacial misfit array formation for GaSb growth on GaAs, Journal of Applied Physics, 2009, 105 (10).
Jun Tatebayashi, Anitha Jallipalli, Maya Narayanan Kutty, Shenghong Huang, Kalyan Nunna, Ganesh Balakrishnan, L. Ralph Dawson, and Diana L. Huffaker, Monolithically integrated III-Sb based laser diodes grown on miscut Si substrates, IEEE Journal of Selected Topics in Quantum Electron, 2009, 15 (3), 716-23.
Kamil Gradkowski, Tomasz J. Ochalski, David P. Williams, Jun Tatebayashi, Arezou Khoshakhlagh, Ganesh Balakrishnan, Eoin P. O’Reilly, Guillaume Huyet, Larry R. Dawson and Diana L. Huffaker, Optical transition pathways in type-II Ga(As)Sb quantum dots , Journal of Luminescence, 2009, 129 (5), 456-460 .
Li Gao, Robyn L. Woo, Baolai Liang, Marta Pozuelo, Sergey Prikhodko, Mike Jackson, Niti Goe, Mantu K. Hudait, Diana L. Huffaker, Mark S. Goorsky, Suneel Kodambaka and Robert F. Hicks, Self-Catalyzed Epitaxial Growth of Vertical Indium Phosphide Nanowires on Silicon, Nano Lett, 2009, 9 (6), 2223–2228.
TATEBAYASHI J., NUNTAWONG N., WONG P. S., XIN Y.-C. , LESTER L. F., HUFFAKER D. L., Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices, Journal of physics. D, 2009, 42 (7).
A. Jallipalli, G. Balakrishnan, S. H. Huang, T. J. Rotter, K. Nunna, B. L. Liang, L. R. Dawson and D. L. Huffaker, Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations , delete me, 2009, 4 (12), 1458-1462.
Jallipalli A, Balakrishnan G, Huang SH, Rotter TJ, Nunna K, Liang BL, Dawson LR, Huffaker DL, Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations, Nanoscale Res Lett, 2009, 4 (12), 1458-1462.
P S Wong, B L Liang, V G Dorogan, A R Albrecht, J Tatebayashi, X He, N Nuntawong, Yu IMazur, G J Salamo, S R J Brueck and D L Huffaker, Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure, Nanotechnology, 2008, 19, 435710.
Timm, R.; Eisele, H.; Lenz, A.; Ivanova, L.; Balakrishnan, G.; Huffaker, D. L.; Dähne, M., Self-Organized Formation of GaSb/GaAs Quantum Rings, Physical Review Letters, 2008, 101 (25).
S.H. Huang, G. Balakrishnan M. Mehta, A. Khoshakhlagh, A. Jallipalli, L.R. Dawson and D.L. Huffaker, Arsenic-induced etched nanovoids on GaSb (100), Journ. Appl. Phys, 2007, 102 (4).
P.S. Wong, G. Balakrishnan, N. Nuntawong, L. Xue, J. Tatebayashi, A. Albrecht, P. Rotella, S.R.J. Brueck, and D. L. Huffaker, Controlled InAs quantum dot nucleation on faceted nanopatterned pyramids, Appl. Phys. Lett, 2007, 90 (18).
R.B. Laghumavarapu, A. Moscho, N. Nuntawong, L.F. Lester, and D.L. Huffaker, Effect of strain compensation in InAs/GaAs quantum dot solar cells, submitted to Appl. Phys. Lett, 2007, L07-03487.
S.H. Huang, G. Balakrishnan, M. Mehta, A. Khoshakhlagh, L.R. Dawson and D.L. Huffaker , Epitaxial growth and formation of interfacial misfit array for tensile GaAs on GaSb, Appl. Phys. Lett, 2007, 90 (16), 161902-5.
R.B. Laghumavarapu, A. Moscho, A. Khoshakhlagh, L.F. Lester, and D.L. Huffaker, GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response, Appl. Phys. Lett, 2007, 90 (17).
S.H. Huang, G. Balakrishnan, A. Khoshakhlagh, P. Li, L.R. Dawson and D.L. Huffaker, Growth and characterization of interfacial misfit arrays for AlSb on 5° miscut Si substrate, submitted to Appl. Phys. Lett, 2007.
J. Tatebayashi, A. Khoshakhlagh, G. Balakrishnan, S. Huang, M. Mehta, L. R. Dawson, and D. L. Huffaker, Lasing operation at room temperature of type-II GaSb/GaAs self-assembled quantum dots, submitted to Appl. Phys. Lett, 2007.
N. Nuntawong, J. Tatebayashi, P.S. Wong and D. L. Huffaker, Localized strain reduction in strain-compensated InAs/GaAs stacked quantum dot structures, Appl. Phys. Lett , 2007, 90 (16), 163121.
J. Tatebayashi, R. B. Laghumavarapu, N. Nuntawong, and D. L. Huffaker, Measurement of electro-optic coefficients of 1.3 μm self-assembled InAs/GaAs quantum dots, Elect. Lett. , 2007, 43, 410-412.
A. Jallipalli, G. Balakrishnan, S.H. Huang and D.L. Huffaker, Modeling of Interfacial Misfit Array Dislocations for Highly Mismatched III-V Semiconductor Materials using Molecular Mechanics, J. Cryst. Growth , 2007, 303 (2), 449.
G. Balakrishnan, M. Mehta, M.N. Kutty, L.R. Dawson, D.L. Huffaker, Monolithically Integrated CMOS compatible III-Sb Superluminescent LED on Si (001), Electron. Lett, 2007 (43).
Tian Yang, Ling Lu, Min-Hsiung Shih and J. D. O'Brien, G. Balakrishnan and D. L. Huffaker, Room Temperature InGaSb Quantum Well Microcylinder Lasers at 2 μm Grown Monolithically on a Silicon Substrate, J. Vac. Sci. Technol. B, 2007, 25 (5), 1622-1625 .
M. Mehta, G. Balakrishnan, A. Jallapali, M.N. Kutty, L.R. Dawson, and D.L. Huffaker, Room-temperature operation of buffer-free GaSb/AlGaSb quantum-well diode lasers developed on a GaAs platform emitting at 1.65 μm, submitted to Photon. Techn. Lett, 2007.
J. Tatebayashi, A. Khoshakhlagh, S. H. Huang, L. R. Dawson, G. Balakrishnan, and D. L. Huffaker, Formation and Optical Characteristics of Strain-relieved, Densely Stacked GaSb/GaAs Quantum Dots, Appl. Phys. Lett, 2006, 89 (20), 203116.
M.Mehta, G.Balakrishnan, S. Huang, A.Khoshakhlagh, A.Jallipalli, P. Patel, M.N.Kutty, L.R. Dawson and D.L. Huffaker, GaSb QW-based "Buffer-free" Vertical LED Monolithically Embedded Within a GaAs Cavity Incorporating Interfacial Misfit (IMF) Arrays, Appl. Phys. Lett, 2006 (89), 21.
J. Tatebayashi , N. Nuntawong, Y. C. Xin, P. S. Wong, S. Huang, L. F. Lester and D. L. Huffaker, Ground-state Lasing of Stacked InAs/GaAs Quantum Dots With GaP Strain-compensation Layers Grown by Metalorganic Chemical Vapor Deposition, Appl. Phys. Lett, 2006, 88 (22), 221107.
G. Balakrishnan , S. Huang , A. Khoshaklagh , A. Jallipalli , J. Tatebayashi , L.R. Dawson and D.L. Huffaker, III/V Ratio Based Selectivity between Strained Stransky-Krastanov and Strain-Free GaSb Quantum Dots on GaAs, Appl. Phys. Lett, 2006, 89 (16), 161104.
G. Balakrishnan, A. Jallipalli, S.H. Huang, A. Khoshakhlagh, P. Rotella, A. Amtout, S. Krishna, C.P. Haines, L.R. Dawson and D.L. Huffaker , Monolithic growth of III-Sb on Si for Integrated Photonic light Emitters, IEEE Journ. Select. Topics in Silicon Photonics, 2006 (12), 1636.
G. Balakrishnan, S.H. Huang, A. Khoshakhlagh, A. Jallipalli, P. Rotella, A. Amtout, S. Krishna, C.P. Haines, L.R. Dawson and D.L. Huffaker, Room-temperature Optically-pumped GaSb Quantum Well based VCSEL Monolithically Grown on a Si (100) Substrate, Electron. Lett. , 2006, 42 (6), 350-352.
Z. Mi, J. Yang, P. Bhattacharya, D.L. Huffaker, Self-organised quantum dots as dislocation filters: The case of GaAs-based lasers on silicon, Electronics Lett, 2006, 121 (42).
S.H. Huang, G. Balakrishnan, A. Khoshakhlagh, A. Jallipalli, L.R. Dawson, and D.L. Huffaker, Strain Relief by Periodic Misfit Arrays for Low Defect Density GaSb on GaAs, Appl. Phys. Lett, 2006, 88 (13), 131911.
G. Balakrishnan, S. H. Huang, L. R. Dawson, Y. C. Xin, P. Conlin, D. L. Huffaker, Growth mechanisms of highly mismatched AlSb on a Si substrate, Applied Physics Letters, 2005, 86 (3), 34105-1-3.
S. Birudavolu, S. Q. Luong, N. Nuntawong, Y. C. Xin, C. P. Hains, D. L. Huffaker, In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition, Journal of Crystal Growth, 2005, 277 (1-4), 97-103.
N. Nuntawong, Y. C. Xin, S. Birudavolu, P. S. Wong, S. Huang, C. P. Hains, D. L. Huffaker, Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition, Applied Physics Letters, 2005, 86 (19), 193115.
G. Balakrishnan, S. H. Huang, A. Khoshakhlagh, P. Hill, A. Amtout, S. Krishna, G. P. Donati, L. R. Dawson, D. L. Huffaker, Room-temperature Optically-pumped InGaSb quantum well lasers monolithically grown on Si (100) substrate, Electronics Letters, 2005, 41 (9), 531-532.
S.Birudavolu, N.Nuntawong, G.Balakrishnan, Y.C.Xin, S.Huang, S.C.Lee, S.R.J. Brueck, C.P. Hains and D.L. Huffaker, Selective Area Growth of InAs Quantum Dots Formed on a Patterned GaAs Substrate, Appl. Phys. Lett, 2004, 85 (12), 2337-2340.
A. A. El-Emawy, S. Birudavolu, P.S. Wong, Y.-B. Jiang, H. Xu, S. Huang, and D.L. Huffaker, Formation Trends in Quantum Dot Growth using Metalorganic Chemical Vapor Deposition, J. Appl. Phys, 2003, 93 (6), 3529-3534.
Y.-C. Xin, L. G. Vaughn, L. R. Dawson, A. Stintz, Y. Lin, L.F. Lester, K.J. Malloy and D.L. Huffaker, InAs Quantum Dot GaAs-based Lasers Grown on AlGaAsSb Metamorphic Buffers, J. Appl. Phys, 2003, 94 (3), 2133-2135.