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Faculty DataBase - FDB5

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Jane Chang, Ph.D.

   
William F. Seyer Chair in Materials Electrochemistry, Chemical and Biomolecular Engineering
Research and Physical Resources, SEAS
Member, California NanoSystems Institute

Education:
Degrees:
Ph.D., Massachusetts Institute of Technology, 1998
M.S., Massachusetts Institute of Technology, 1995
B.S., National Taiwan University, Taiwan, 1993

Academic Experience:
Fellowships:
1993 Massachusetts Institute of Technology, Rumbel Practice School Fellowship

Honors and Awards:
2009 Chemical Engineering, UCLA, Professor of the Year
2006 National Academy of Engineering, Frontier of Engineering Symposium Participants
2005 AVS Science and Technology Society, Peter Mark Award
2004 American Automatic Control Council, O. Hugo Schuck Best (Application) Paper Award
2004 Chemical Engineering, UCLA, Professor of the Year
2003 Chemical Engineering, UCLA, Teacher of the Year
2003 ONR Young Investigator Award
2002 TRW Excellence in Teaching Award
2000 UCLA, Chancellor’s Career Development Award
2000 NSF CAREER Award
1996 American Vacuum Society (Plasma Science and Technology Division), John Coburn and Harold Winters Student Award
1993 National Taiwan University, Taiwan, Elected to Phi Tau Phi Honor Societies
1990 National Taiwan University, Taiwan, Book Coupon Awards

Contact Information:
Email Address: jpchang@seas.ucla.edu
Work Email Address: jpchang@seas.ucla.edu
Mailing Address: 5532-D Boelter Hall
UCLA
Los Angeles, CA 90095
UNITED STATES
Home Page: http://www.seas.ucla.edu/Chang/jpchang.html
Fax Number: 310-206-4107
Work Phone Number: 310-206-7980

Selected Publications:

Galatsis K, Wang KL, Ozkan M, Ozkan CS, Huang Y, Chang JP, Monbouquette HG, Chen Y, Nealey P, Botros Y., Patterning and templating for nanoelectronics, Adv Mater, 2010, 22 (6), 769-78.
Y. Mao, T, Tran, X. Guo, J. Y. Huang, C. K. Shih, K. L. Wang, and J. P. Chang, Luminescence of Nanocrystalline Erbium-Doped Yttria, Advanced Functional Materials, 2009, 19 (5), 1-7.
Mao, X. Guo, J. Y. Huang, K. L. Wang, and J. P. Chang, Luminescent Nanocrystals with A2B2O7 Composition Synthesized by a Kinetically Modified Molten Salt Method, Journal of Physical Chemistry C, 2009, 113 (4), 1204-8.
R. M. Martin and J. P. Chang, Plasma Etching of Hf-based High-k Thin Films, Part I: Effect of Complex Ions and Radicals on the Surface Reactions, Journal of Vacuum Science and Technology A, 2009, 27 (2), 209-216.
R. M. Martin, H.-O. Blom, and J. P. Chang, Plasma Etching of Hf-based High-k Thin Films, Part II: Ion-enhanced Surface Reaction Mechanisms, Journal of Vacuum Science and Technology A, 2009, 27 (2), 217-223.
R. M. Martin and J. P. Chang, Plasma Etching of Hf-based High-k Thin Films, Part III: Modeling the Reaction Mechanisms, Journal of Vacuum Science and Technology A, 2009, 27 (2), 224-9.
Y.B. Mao, J. Bargar, M. Toney and J.P. Chang, Correlation between luminescent properties and local coordination environment for erbium doped yttrium oxide nanotubes, Journal of Applied Physics, 2008, 103 (9), 094316.
J. Hoang, C.C. Hsu and J.P. Chang, Feature profile evolution during shallow trench isolation etch inchlorine-based plasmas. I. Feature scale modeling, J. Vac. Sci. Technol. B, 2008, 26 (6), 1911-8.
C.C. Hsu, J. Hoang, V. Le and J.P. Chang, Feature profile evolution during shallow trench isolation etch inchlorine-based plasmas. II. Coupling reactor and feature scale models, J. Vac. Sci. Technol. B, 2008, 26 (6), 1919-25.
J. Liu, Y. Mao, E. Lan, D. R. Banatao, G. J. Forse, J. Lu, H.-O. Blom, T. O. Yeates, B. Dunn, and J. P. Chang, Generation of Oxide Nano-Patterns by Combining Self-Assembly of S-Layer Proteins and Area Selective Atomic Layer Deposition, Journal of American Chemical Society, 2008, 130 (50), 16908-16913.
Liu J, Mao Y, Lan E, Banatao DR, Forse GJ, Lu J, Blom HO, Yeates TO, Dunn B, Chang JP, Generation of oxide nanopatterns by combining self-assembly of S-layer proteins and area-selective atomic layer deposition, J Am Chem Soc, 2008, 130 (50), 16908-13.
M. Sawkar-Mathur and J.P. Chang, Material and electrical properties of sputter-deposited HfxRuy and HfxRuyNz metals as gate electrodes for p-metal oxide semiconductors field effect transistors devices, Journal of Applied Physics, 2008, 104 (8), 084101.
Y.B. Mao, J.Y. Huang, R. Ostroumov, K.L. Wang and J.P. Chang, Synthesis and Luminescence Properties of Erbium-Doped Y2O3 Nanoparticles, Journal of Physical Chemistry C, 2008, 112 (7), 2278-85.
M. Sawkar-Mathur, S. Perng, J. Lu, H.-O. Blom, J. Bargar, and J. P. Chang, The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge, Applied Physics Letters, 2008, 93, 233501.
C. Cruz, J.P. Chang, M. Fico, A.J. Guymon, D.E. Austin and M.G. Blain, Design, Microfabrication, and analysis of micrometer-sized cylindrical ion trap arrays, Review of Scientific Instruments, 2007, 78 (1), 015107.
C.M. Tanner, Y-C Perng, C. Ferwin, S.E. Saddow and J.P. Chang, Electrical performance of Al2O3 gate dielectric thin films deposited by atomic layer deposition on 4H-SiC, Applied Physics Letters, 2007, 91 (20), 203510.
C.M. Tanner, J. Choi, and J.P. Chang, Electronic structure and band alignment at the HfO2/4H-SiC interface, Journal of Applied Physics, 2007, 101 (3), 034108.
C.M. Tanner, M.F. Toney, J. Lu, H.-O. Blom, M. Sawkar-Mathur, M.A. Tafesse and J.P. Chang, Engineering epitaxial gamma-Al2O3 gate dielectric films on 4H-SiC, Journal of Applied Physics, 2007, 102 (10), 104112.
K-C Lu, W-W Wu, H-W- Wu, C.M. Tanner, J.P. Chang, L.J. Chen, and K.N. Tu, In situ control of atomic-scale Si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction, Nano Letters, 2007, 7 (8), 238994.
D. Cruz, J.P. Chang, S.K. Showalter, F. Gelbard, R.P. Manginell, and M.G. Blain, Microfabricated thermal conductivity detector for the micro-ChemLab (TM), Sensors and Actuators B, 2007, 121 (2), 414-422.
J. Hoang, T.T. Van, M. Sawkar-Mathur, B. Hoex, M. Van de Sanden, W.M.M Kessels, R. Ostroumov, K.L. Wang, J.R. Bargar and J.P. Chang, Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition, Journal of Applied Physics, 2007, 101 (12), 123116.
C.M. Tanner, M. Sawkar-Mathur, J. Lu, H.-O. Blom, M. Toney, and J.P. Chang, Structural properties of epitaxial gamma-Al2O3 (111) thin filims on 4H-SiC (0001), Applied Physics Letters, 2007, 90 (6), 061916.
J. Choi, R. Puthenkovilikam, and J.P. Chang, Effect of nitrogen on the electronic properties of hafnium oxynitrides, Journal of Applied Physics, 2006, 99 (5), 053705.
T.T. Van, J.R. Bargar, and J.P. Chang, Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure, Journal of Applied Physics, 2006, 100 (2), 023115.
T.T. Van, J.Hoang, R. Ostroumov, K.L. Wang, J.R. Bargar, J. Lu H.-O. Blom and J.P. Chang, Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits, Journal of Applied Physics, 2006, 100 (7), 073512.
H.T. Johnson-Steigelman, A.V. Brinck, J.P. Chang and P.F. Lyman, Production of a hafnium silicate dielectric layer for use as a gate oxide by solid-state reaction, Journal of Vacuum Science &Technology A, 2006, 24 (4), 1218-22.
J. Choi, R. Puthenkovilakam, and J. P. Chang, Band structure and alignment of the AlN/SiC heterostructure, Applied Physics Letters, 2005, 86 (19), 192101.
X. Yang, M. Moravej, G. R. Nowling, S. E. Babayan, J. Panelon, J. P. Chang, and R. F. Hicks, Comparison of an atmospheric pressure, radio-frequency discharge operating in the alpha and gamma modes, Plasma Sources Sci. Technol, 2005, 14 (2), 314-20.
T.T. Van and J.P. Chang, Controlled erbium incorporation and photoluminescence of Er-doped Y2O3, Applied Physics Letters, 2005, 87 (1).
R. Puthenkovilakam, Y.-S. Lin, J. Choi, J. Lu, H.-O. Blom, P. Pianetta, D. Devine, M. Sendler, and J. P. Chang, Effects of post-deposition annealing on the material characteristics of ultrathin HfO2 films on silicon, Journal of Applied Physics, 2005, 97 (2), 023704-7 .
R. Puthenkovilakam, M. Sawkar, J.P. Chang, Electrical characteristics of postdeposition annealed HfO2 on silicon, Applied Physics Letters, 2005, 86 (20), 202902.
D. Cruz, J. P. Chang, and M. G. Blain, Field emission characteristics of a tungsten microelectromechanical system device, Applied Physics Letters, 2005, 86 (15), 153502.
X. Yang, M. Moravej, G. R. Nowling, J. P. Chang, and R. F. Hicks, Operating Modes of an Atmospheric Pressure Radio Frequency Plasma, IEEE Transactions on Plasma Science, 2005, 33 (2), 294-5.
J.W. Choi and J.P. Chang, Photoconductivity of AlN films on SiC, Journal of Applied Physics, 2005, 98 (9).
S. X. Lao, R. M. Martin, and J. P. Chang, Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k films, J. Vac. Sci. Technol. A, 2005, 23 (3), 488-496.
T.T. Van and J.P. Chang, Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals, Surface Science, 2005, 596 (1-3), 1-11.
T. T. Van and J. P. Chang, Surface reaction kinetics of metal beta-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides, Applied Surface Science, 2005, 246 (1-3), 250-261.
Puthenkovilakam, R., and Chang, J. P., An accurate determination of barrier heights at the HfO2/Si interfaces, J. Appl. Phys. , 2004, 96 (5), 2701-7.
Puthenkovilakam, R., Carter, E. A., and Chang, J. P., First-priciples exploration of alternative gate dielectrics: Electronic structure of ZrO2/Si and ZrSiO4/Si interfaces, Physical Review B, 2004, 69 (11), 155329.
T. J. Huang, H.-R. Tseng, L. Sha, W. Lu, B. Brough, A.H. Flood, B.-D. Yu, P. C. Celestre, J. P. Chang, J. F. Stoddart, and C.-M. Ho, Mechanical Shuttling of Linear Motor-Molecules in Condensed Phases on Solid Substrates, Nano Letters, 2004, 4 (11), 2065-71.
M. Moravej, X. Yang, G. R. Nowling, J. P. Chang, R. F. Hicks, and S. E. Babayan, Physics of high-pressure helium and argon radio-frequency plasmas, Journal of Applied Sciences, 2004, 96 (12), 7011-17.
Sha, L. and Chang, J. P., Plasma Etching of High Dielectric Constant Materials on Silicon in Halogen Chemistries, Journal of Vacuum Science and Technology A, 2004, 22 (1).
Chang, J. P. and Sha, L., Plasma-surface interactions in patterning high-k dielectric materials, Semiconductor FabTech, 2004, 22 (Invited), 75-80.
Ni, Dong, Y. Lou, P.D. Christofides, L. Sha, S. Lao, J.P. Chang, Real-Time Carbon Content Control for PECVD ZrO2 Thin Film Growth, IEEE Trans. Semiconduct. Manufact, 2004, 17 (2), 221.
Puthenkovilakam, R., and Chang, J. P., Valence band structure and band alignment at the ZrO2/Si interface, Applied Physics Letters, 2004, 84 (8), 1353-1355.
Lin, Y-S., Puthenkovilakam, R., Chang, J. P., Bouldin C., Levin I., Nguyen N.V. Ehrstein J., Sun Y., Pianetta P., Concard T., Vandervorst W., Venturo V. and Selbrede S., Interfacial properties of ZrO2 on silicon, Journal of Applied Physics, 2003, 93 (10), 5945-5951.
Sha, L., Puthenkovilakam R., Lin Y. and Chang, J. P., Ion-enhanced chemical etching of HfO2 for integration in MOSFETs, Journal of Vacuum Science and Technology B, 2003, 21 (6).
Cho, B.- O., Chang, J. P., Min J.H., Moon S.H., Kim Y.W. and Levin I., Material characteristics of electrically tunable zirconium oxide thin film, Journal of Applied Physics, 2003, 93 (1), 745-9.
Sha, L. and Chang, J. P., Plasma etching selectivity of ZrO2 to Si in BCl3/Cl2 plasma, Journal of Vacuum Science and Technology A, 2003, 21 (6).
Cho, B.- O., Lao, S. and Chang, J. P., The Origin and Effect of Impurity Incorporation in Plasma Enhanced ZrO2 Deposition, Journal of Applied Physics, 2003, 93 (11), 9345-9351.